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10 Pieces IRFZ34N Vdss55V RDS(on)0.040ohm Id26A TO220 Power N-Channel MOSFET Transistor
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10 Pieces IRFZ34N Vdss55V RDS(on)0.040ohm Id26A TO220 Power N-Channel MOSFET Transistor
10 Pieces IRFZ34N Vdss=55V RDS(on)=0.040ohm Id=26A TO220 Power N-Channel MOSFET Transistor
Item #: 123287982

10 Pieces IRFZ34N Vdss=55V RDS(on)=0.040ohm Id=26A TO220 Power N-Channel MOSFET Transistor

Item #: 123287982

GMD 956

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Note: Step Down Voltage Transformer required for using electronics products of US store (110-120). Recommended power converters Buy Now.

What Stands Out

High Voltage Rating
With a Vds rating of 55V, the IRFZ34N handles high voltage applications efficiently, ensuring reliability and longevity for projects requiring robust performance in demanding environments.
Low On-Resistance
A low RDS(on) of 0.040 ohms minimizes conduction losses, providing better energy efficiency and thermal performance in power management applications, making it ideal for high-performance circuits.
Ample Current Capacity
Designed to handle up to 26A, the IRFZ34N is perfect for applications requiring substantial current, catering to a wide range of electronic projects with demanding power needs.

Product Details

Shop 10 Pieces IRFZ34N Vdss=55V RDS(on)=0.040ohm Id=26A TO220 Power N-Channel MOSFET Transistor online at a best price in The Gambia. B0BNKQ27L7
Item Weight0.2 lbs (90 grams)

Who Should Buy?

Suitable For
  • Hobby Electronics

    Ideal for electronics enthusiasts building circuits in need of reliable switching capabilities and power handling.

  • DIY Projects

    Great for DIY projects requiring efficient power management, including motor control and power supply designs.

  • Automotive Applications

    Suitable for automotive electronics that demand robust performance under varying load conditions and voltages.

Not Suitable For
  • High Frequency Use

    Not suitable for applications that operate at high frequencies due to potential switching losses.

  • Low-Power Circuits

    Not ideal for low-power circuits where smaller, less powerful transistors could be used more efficiently.

  • Complex Devices

    Not recommended for complex devices requiring advanced features beyond basic switching and power control.

Product Description

10 Pieces IRFZ34N Vdss=55V RDS(on)=0.040ohm Id=26A TO220 Power N-Channel MOSFET Transistor

Have any Query? Chat with us

Customer Questions & Answers

  • Question: What is the maximum voltage rating of the IRFZ34N MOSFET?

    Answer: The maximum voltage rating, known as Vdss, of the IRFZ34N MOSFET is 55V. This rating signifies that the transistor can handle up to 55 volts between the drain and source terminals. It's crucial to ensure that the voltage used in your application does not exceed this limit, as doing so may lead to device failure. This makes it a reliable choice for various electronic projects, such as power management in LED applications or motor control systems.
  • Question: What is the RDS(on) value of the IRFZ34N MOSFET?

    Answer: The RDS(on) value of the IRFZ34N MOSFET is 0.040 ohms. This low on-resistance indicates that the transistor will have minimal resistance when in the 'on' state, which helps to improve thermal performance and power efficiency. In practical applications, using components with low RDS(on) values can lead to reduced heat generation, making it ideal for high-current scenarios, such as DC-DC converters or switching power supplies.
  • Question: What is the significance of the Id rating of the IRFZ34N?

    Answer: The Id rating of the IRFZ34N MOSFET is 26A, indicating the maximum continuous drain current the device can handle. This means you can safely use this transistor in applications that require substantial current without risking overheating or damage. Scenarios might include switching heavy loads in relay drivers or driving motors, where high current capability is essential for reliable operation.
  • Question: What are common applications for the IRFZ34N MOSFET?

    Answer: Common applications for the IRFZ34N MOSFET include power management, motor control, and amplification circuits. Its specifications allow it to manage significant currents while maintaining efficiency, making it suitable for use in power converters, motor drivers, and other high-efficiency electronic designs. Engineers often choose this MOSFET for projects that require robust performance in demanding conditions.
  • Question: Can I use the IRFZ34N in high-frequency applications?

    Answer: While the IRFZ34N is capable of operating at moderate frequencies, it is not specifically designed for high-frequency applications. Its gate charge and switching characteristics may result in slower switching speeds compared to fast-switching MOSFETs. For applications such as audio amplifiers or RF circuits, selecting a MOSFET specifically designed for high frequency will yield better performance and efficiency.
  • Question: What type of cooling method is recommended for the IRFZ34N?

    Answer: For optimal performance of the IRFZ34N, it is recommended to use a heat sink or active cooling methods in high-power applications. Due to the nature of power MOSFETs generating heat under load, using a heat sink will help dissipate this heat effectively and increase the reliability of the transistor. This is especially important in high-current applications such as LED drivers or battery management systems.
  • Question: Is the IRFZ34N suitable for automotive applications?

    Answer: Yes, the IRFZ34N can be used in automotive applications where a reliable MOSFET is needed for switching or control functions. With its voltage rating and current capabilities, it is appropriate for automotive power distribution systems, motor control for power windows, or electronic throttle controls. However, ensure that the specific application falls within its voltage and current limits.
  • Question: How should I drive the gate of the IRFZ34N MOSFET?

    Answer: To drive the gate of the IRFZ34N MOSFET effectively, a voltage higher than the threshold voltage (typically 2-4V) is required to turn it on fully. For optimal performance, a gate voltage of 10V is often recommended. It’s practical to use a dedicated MOSFET driver circuit for fast switching and to ensure that the device is fully enhanced in various switching scenarios, such as in power supply circuits or motor controls.
  • Question: Can the IRFZ34N be used for both low and high side switching?

    Answer: Yes, the IRFZ34N MOSFET can be used for both low-side and high-side switching configurations. For low-side switching, it is placed between the load and ground. In high-side applications, certain driver circuits may be necessary to appropriately control the gate voltage due to the source potential rising with the load current. This versatility allows it to be implemented in diverse circuit designs for controlling loads effectively.
  • Question: Where can I buy 10 Pieces IRFZ34N MOSFET in The Gambia?

    Answer: You can buy 10 Pieces of IRFZ34N Vdss=55V RDS(on)=0.040ohm Id=26A TO220 Power N-Channel MOSFET Transistor from Ubuy. Ubuy offers a broad selection of electronic components, ensuring you can find specific products easily and efficiently for your projects.

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