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Item #:
143948295
IPP023N08N5AKSA1 Transistor: N-MOSFET unipolar 80V 120A 375W PG-TO220-3 INFINEON
Item #:
143948295
GMD 1761
Price Details
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Imported from USA store
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Experience superior efficiency with the IPP023N08N5AKSA1 Transistor: 80V, 120A, and 375W of power handling capacity.
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Note: Step Down Voltage Transformer required for using electronics products of US store (110-120). Recommended power converters Buy Now.
What Stands Out
High Voltage Rating
With an 80V voltage rating, this N-MOSFET ensures reliability and robustness in high-voltage applications, providing peace of mind for engineers across various industries.
Power Efficiency
The 375W power capability allows for high performance in power management applications, ensuring efficient operation and reducing losses, which translates to cost savings in system designs.
Robust Package Design
Packaged in PG-TO220-3, it enables easy integration into circuits, ensuring optimal thermal performance and mechanical stability, making it ideal for demanding environments.
Product Details
| Item Weight | 0.05 lbs (20 grams) |
Who Should Buy?
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High Power Applications
Ideal for applications requiring high power handling up to 375W, providing efficiency and reliability.
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Industrial Equipment
Designed for use in industrial equipment where robust performance under heavy loads is essential.
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Power Management
Suitable for power management circuits needing low on-state resistance and fast switching capabilities.
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Low Power Devices
Not suitable for low power applications where a smaller transistor would suffice, leading to inefficiency.
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Consumer Electronics
May not be ideal for consumer electronics that require compact size and low power dissipation.
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Simple Projects
Not advisable for hobbyist projects that don't demand high capacity or advanced MOSFET characteristics.
Product Description
IPP023N08N5AKSA1 Transistor: N-MOSFET unipolar 80V 120A 375W PG-TO220-3 INFINEON
Have any Query? Chat with us
Customer Questions & Answers
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Question:
What is the IPP023N08N5AKSA1 transistor used for?
Answer: The IPP023N08N5AKSA1 is an N-MOSFET transistor designed for high-power applications, operating at 80V with a current rating of 120A. It is commonly used in power management circuits, high-efficiency switching power supplies, and motor control applications. Its robust capabilities allow for efficient switching and excellent thermal performance, making it suitable for demanding applications like electric vehicles and renewable energy systems. -
Question:
What are the characteristics of the IPP023N08N5AKSA1 transistor?
Answer: The key characteristics of the IPP023N08N5AKSA1 include a breakdown voltage of 80V, a continuous drain current of 120A, and a maximum power dissipation of 375W. These specifications enable it to handle substantial electrical loads efficiently. Its PG-TO220-3 package allows for effective thermal conduction and is designed to minimize parasitic inductance, which leads to faster switching times and improved circuit performance. -
Question:
What makes the N-MOSFET technology beneficial?
Answer: N-MOSFET technology is favored for its efficiency in switching applications, primarily due to its lower on-resistance and faster switching speeds compared to P-MOSFETs. This results in less heat generation and reduced power losses, enhancing overall system efficiency. Consequently, N-MOSFETs like the IPP023N08N5AKSA1 are ideal for applications such as power converters and automotive systems, where performance and thermal management are critical. -
Question:
Can the IPP023N08N5AKSA1 be used in automotive applications?
Answer: Yes, the IPP023N08N5AKSA1 is well-suited for automotive applications, thanks to its high current and voltage handling capabilities. It is particularly useful in electric vehicle drive systems, battery management systems, and various control circuits. Its ability to operate under high-stress conditions while maintaining reliable performance makes it a key component in modern automotive electronics. -
Question:
How does the packaging of the IPP023N08N5AKSA1 affect its performance?
Answer: The PG-TO220-3 package of the IPP023N08N5AKSA1 is designed for optimal thermal performance and efficient mounting. This particular packaging allows for excellent thermal dissipation, which is crucial for high-power applications. Enhanced thermal management reduces the risk of overheating, thus ensuring stable operation in demanding environments, like industrial control systems and power management solutions. -
Question:
What is the maximum gate-source voltage for the IPP023N08N5AKSA1?
Answer: The maximum gate-source voltage (Vgs) for the IPP023N08N5AKSA1 is ±20V. This specification is vital for ensuring safe operation and effective control of the MOSFET. Exceeding this voltage can damage the gate oxide, leading to device failure. This attribute is important in designing circuits that require precise voltage control, such as in power drivers and switching regulators. -
Question:
What simulation tools can be used for the IPP023N08N5AKSA1?
Answer: To analyze and simulate the performance of the IPP023N08N5AKSA1 transistor, tools such as SPICE (Simulation Program with Integrated Circuit Emphasis) can be highly effective. These tools allow designers to model circuit behavior under different conditions, helping optimize designs for efficiency and reliability. Proper simulation can significantly reduce development time and ensure performance meets the required specifications in actual applications. -
Question:
Are there any typical applications for the IPP023N08N5AKSA1?
Answer: Typical applications for the IPP023N08N5AKSA1 include DC-DC converters, power inverters, and motor controllers. Its ability to handle high currents makes it ideal for power electronics where efficiency and reliability are essential. Whether used in renewable energy systems for battery management or in industrial drives, this transistor's robust design ensures effective performance in diverse applications. -
Question:
What are the thermal characteristics of the IPP023N08N5AKSA1?
Answer: The IPP023N08N5AKSA1 boasts a thermal resistance of approximately 0.5 °C/W, which highlights its efficiency in heat dissipation. This low thermal resistance is crucial for maintaining optimal operation, especially in high-load scenarios. Effective thermal management is paramount in applications like power converters and motor drives, where excess heat can adversely impact reliability and performance. -
Question:
Where can I buy the IPP023N08N5AKSA1 transistor?
Answer: You can buy the IPP023N08N5AKSA1 transistor from Ubuy in The Gambia. Ubuy offers a wide range of electronic components, ensuring you can find the necessary parts for your projects. With a user-friendly interface, Ubuy provides information on product specifications, making it easier to choose the right components for your applications.
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GMD 1761
Order now and get it around Thursday, July 02
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Secured transaction
Ubuy works hard to protect your security and privacy. Our advanced payment security system ensures confidentiality by encrypting your information during transmission using AES (Advanced Encryption Standards) and SSL (Secure Socket Layer) protocols. Your payment details are 100% secure as we do not share your payment details with third party sellers.
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Features & Benefits
- Unipolar N-MOSFET technology ensures optimal performance.
- High drain-source voltage rating of 80V.
- Impressive drain current capability of 120A.
- Power dissipation reaches up to 375W.
- Compact PG-TO220-3 case for versatile mounting options.
- Ultra-low on-state resistance of 2.3mΩ for minimal energy loss.